MOSFET archives - Page 553 of 1244

Description

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Low input capacitance.

3) Excellent resistance to damage from static electricity.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Total Power Dissipation: Pd =35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Application

1. Switching

Other data sheets are available within the file: 050N50, RDX050N50

Part Number: NP100P06PDG

Function: P-Channel, 60V, MOS FIELD EFFECT TRANSISTOR

Package: TO-263 Type

Image and Pinouts:

NP100P06PDG datasheet

Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Super low on-state resistance

(1) RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)

(2)RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)

• High current rating: ID(DC) = m100 A

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 100 A

4. Single Avalanche Energy : Eas = 420 mJ

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file:

NP100P06, NP100P06PDG-E1-AY, NP100P06PDG-E2-AY