Part Number: 13N06L

Function: 60V, N-Channel QFET MOSFET

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

Pinouts:

 

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 13.6 A, 60 V, RDS(on)= 110 mΩ(Max.) @ VGS= 10 V ID= 6.8 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

 

13N06L Datasheet PDF Download

Other data sheets are available within the file: FQP13N06L

 

Similar features and reference parts

Part Number: K1482

Function: 30V, 1.5A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Package: TO-92 type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

 

Description

The K1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Features

1. Low on-state resistance :
(1) RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A)
(2) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)

2. Voltage drive at logic level (VGS = 4 V) is possible.

3. Bidirectional zener diode for protection is incorporated in between the gate and the source.

4. Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.

5. Can be used complementary with the 2SJ196

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 1.5 A

4. Total Power Dissipation: Pd = 750 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK1482

K1482 Datasheet PDF Download