MOSFET

IRFZ44 Transistor – 60V, 50A, MOSFET ( Datasheet PDF )

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This post explains for the transistor IRFZ44.

Part Number: IRFZ44

Function: 60V, 50A, Power MOSFET

Package: TO-220 Type

Manufacturer: Fairchild

See the preview image and the PDF file for more information.

Images:

IRFZ44 transistor mosfet

Description

This is 60V, 50A, Advanced Power MOSFET.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Drain power dissipation : PD = 126 W

5. Single pulse avalanche energy : Eas =

6. Avalanche curren : Iar = 50 A

7. Repetitive avalanche energy : Ear = 12.6 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +175 °C

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pinout

IRFZ44 pinout transistor

Features

1. Avalanche Rugged Technology

2. Rugged Gate Oxide Technology

3. Lower Input Capacitance

4. Improved Gate Charge

5. Extended Safe Operating Area

6. 175°C Operating Temperature

7. Lower Leakage Current: 10mA (Max.) @ VDS = 60V

8. Lower RDS(ON): 0.020W (Typ.)

IRFZ44 Transistor Datasheet

IRFZ44 pdf

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IRF640N Transistor – 200V, MOSFET ( Datasheet PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRF640N

Function: 200V, HEXFET Power MOSFET

Package: TO-220AB, D2Pak, TO-262 Pin Type

Manufacturer: International Rectifier, Infineon

This post explains for the MOSFET IRF640N.

Image

IRF640N Transistor

Description

Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF640N Pinout

IRF640N datasheet pinout

Features

1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements

Summary

1. Planar cell structure for wide SOA
2. Optimized for broadest availability from distribution partners
3. Product qualification according to JEDEC standard
4. Silicon optimized for applications switching below <100kHz
5. Industry standard through-hole power package
6. High-current carrying capability package (up to 195 A, die-size dependent)
7. Capable of being wave-soldered

Absolute Maximum Ratings ( Tc = 25°C )

1. Continuous Drain Current : Vgs = 18 V
2. Pulsed Drain Current : Imd = 72 A
3. Power Dissipation: Pd = 150 W
3. Single Pulse Avalanche Energy : Eas = 247 mJ

 

IRF640N Transistor


 

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