MOSFET

SSM40N03P Datasheet – Power MOSFET 40N03P – Silicon Standard

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Part Number: SSM40N03P

Function: N-Channel Enhancement Mode Power MOSFET

Features

  1. Low gate charge
  2. Simple drive requirement
  3. Fast switching

Manufacturer: Silicon standard

Pinouts:
SSM40N03P datasheet

Description

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.

SSM40N03P Datasheet PDF
SSM40N03P pdf


 

RA07M4452M Datasheet – RF MOSFET Amplifier – Mitsubishi

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Part Number: RA07M4452M

Description

7-watt RF MOSFET Amplifier Module

Package: H46S Type

Manufacturer: Mitsubishi Electric

Image: RA07M4452M

Description

The RA07M4452M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA07M4452M Datasheet

RA07M4452M Datasheet