Semiconductor Informations
Part Number: 2SK1058, 2SK1056, 2SK1057
Function: Silicon N-Channel MOS FET
Package: TO-3P Type
Manufacturer: Hitachi
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Applications
1. Low frequency power amplifier
2. Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
1. Good frequency characteristic
2. High speed switching
3. Wide area of safe operation
4. Enhancement-mode
5. Good complementary characteristics
6. Equipped with gate protection diodes
7. Suitable for audio power amplifier
Part Number: 2SJ334
Function: -30A, -60V, P-CHANNEL MOSFET Transistor
Package: TO-220 Type
Manufacturer: Toshiba
Pinouts:
TOSHIBA Field Effect Transistor, Silicon P Channel MOS Type
Absolute maximum ratings ( Ta=25°C )
1. Drain−source voltage: VDSS = -60 V
2. Drain−gate voltage (RGS = 20 kΩ): VDGR = -60 V
3. Gate−source voltage: VGSS = ±20 V
4. Drain current : ID = -30 A
5. Drain power dissipation (Tc = 25°C): PD = 45 W
6. Single pulse avalanche energy : EAS = 936 mJ
7. Avalanche current : IAR = -30 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
6. Channel Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications
1. HIGH SPEED
2. HIGH CURRENT SWITCHING
3. DC-DC CONVERTER
4. RELAY DRIVE AND MOTOR DRIVE
Other data sheets are available within the file: J334
