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Marking : D2NK60Z, Part Number: STD2NK60Z-1

Function: N-CHANNEL 600V Zener-Protected SuperMESH MOSFET

Package: IPAK Pin type

Manufacturer: STMicroelectronics

Image

D2NK60Z mosfet

Description

This is N-channel, 600V, 1.4A, Zener-protected SuperMESH MOSFET.

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Pinout

D2NK60Z datasheet pinout
Features

1. TYPICAL RDS(on) = 7.2 Ω
2. EXTREMELY HIGH dv/dt CAPABILITY
3. ESD IMPROVED CAPABILITY
4. 100% AVALANCHE TESTED
5. NEW HIGH VOLTAGE BENCHMARK
6. GATE CHARGE MINIMIZED

Applications:

1. LOW POWER BATTERY CHARGERS

2. SWITH MODE LOW POWER SUPPLIES(SMPS)

3. LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)

D2NK60Z Datasheet

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Description

1. Low on-resistance : RDS(on) = 4mΩ typ.
2. Low drive current
3. 4V gate drive device can be driven from 5V source

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 60 A
4. Drain peak current : ID(pulse) = 240 A
5. Body-drain diode reverse drain current : IDR = 60 A
6. Avalanche current : IAP = 35 A
7. Avalanche energy : EAR = 122 mJ
8. Channel dissipation: Pch = 35 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature : Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

Other data sheets are available within the file: 2SK3142

MOSFET

D2NK60Z Datasheet – N-ch, 600V, 1.4A, MOSFET ( PDF )

Description

D2NK60Z Datasheet

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Description

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