MOSFET

KF5N50D Datasheet PDF – 500V, 4.3A, N-Ch, MOSFET – KEC

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Part Number: KF5N50D

Function: N CHANNEL MOS FIELD EFFECT TRANSISTOR

Package: DPAK Type

Manufacturer: KEC

Pinouts:

KF5N50D datasheet

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Features

1. V DSS= 500V, I D= 4.3A
2. Drain-Source ON Resistance : R DS(ON)=1.4Ω(Max) @V GS= 10V
3. Qg(typ) = 12nC

Absolute maximum ratings

1. Source Voltage : VDSS = 500 V
2. Gate-Source Voltage : VGSS = ±30 V
3. Drain Current : ID = 4.3 A
4. Single Pulsed Avalanche Energy : Eas = 270 mJ
5. Repetitive Avalanche Energy : Ear = 8.6 mJ
6. Drain Power Dissipation : 59.5 W

Other data sheets are available within the file: KF5N50, F5N50D, KF5N50DZ, 5N50, 5N50D

KF5N50D Datasheet PDF Download


KF5N50D pdf

 

NCE55P30 Datasheet – Vds = -55V, P-ch Power MOSFET – NCE

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Part Number: NCE55P30

Function : P-Channel Enhancement Mode Power MOSFET

Package: TO-220-3L Type

Manufacturer: NCE ( http://www.ncepower.com )

Image

NCE55P30 image

Description

The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Pinout

NCE55P30 datasheet pinout

General Features

1. VDS = -55V, ID = -30A
RDS(ON)<40mΩ@ VGS=-10V
2. High density cell design for ultra low Rdson
3. Fully characterized avalanche voltage and current
4. Good stability and uniformity with high E AS
5. Excellent package for good heat dissipation

Application

1. Power switching application
2. Hard switched and high frequency circuits
3. Uninterruptible power supply

NCE55P30 Datasheet