MOSFET

K2529 Datasheet PDF – 60V, 50A, N-Ch, MOSFET – Hitachi

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Part Number: K2529

Function: 50A, 60V, Silicon N-Channel MOSFET

Package: TO-220CFM type

Manufacturer: Hitachi ( Renesas Electronics )

Image

K2529 MOSFET

Features

1. Low on-resistance
2. RDS(on) = 7 mΩ typ.
3. High speed switching
4. 4 V gate drive device can be driven from 5 V source

Pinouts:

K2529 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body to drain diode reverse drain current : IDR = 50 A
6. Avalanche current : IAP = 45 A
7. Avalanche energy : EAR = 174 mJ
8. Channel dissipation: Pch = 35 W

components

Application

1. High speed power switching

Other data sheets are available within the file: 2SK2529

K2529 Datasheet PDF Download


K2529 pdf

K2221 Datasheet PDF – 200V, 8A, N-Ch, MOSFET – Hitachi

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Part Number: K2221

Function: 8A, 200V, Silicon N Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Pinouts:

K2221 Pinout

Description

1. High power gain
2. Excellent frequency response
3. High speed switching
4. Wide area of safe operation
5. Enhancement–mode
6. Good complementary characteristics
7. Equipped with gate protection diodes

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSX = 200 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 8 A
4. Body to drain diode reverse drain current : IDR = 8 A
5. Channel dissipation: Pch = 100 W
6. Channel temperature: Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C

K2221 Datasheet

Application

1. Low frequency power amplifier
2. Complementary pair with 2SJ351, 2SJ352

Other data sheets are available within the file:  2SK2220, 2SK2221, K2220

K2221 Datasheet PDF Download

K2221 pdf

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