Part Number: IRFD1Z0

Function: 0.5A, 100V, N-Channel Power MOSFET

Package: DIP 4 Pin

Manufacturer: Harris Semiconductor

Pinouts:

 

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451.

Absolute Maximum Ratings

1. Drain to Source : Vds = 100 V
2. Drain to Gate Voltage (RGS = 20kW) : Vdgr = 100 V
3. Continuous Drain Current : Id = 0.5 A
4. Pulsed Drain Current : Idm = 4.0 A
5. Maximum Power Dissipation: Pd = 1.0 W

Features

1. 0.5A, 100V
2. rDS(ON) = 2.4W and 3.2W
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8. Related Literature

Other data sheets are available within the file: IRFD1ZO, IRFD1Z1, IRFD1Z2, IRFD1Z3

IRFD1Z0 Datasheet PDF Download

Part Number: BUZ73A

Function: 5.8A, 200V, 0.600 ohm, N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Harris Semiconductor

Pinouts:

 

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features

1. 5.8A, 200V
2. rDS(ON)= 0.600Ω
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8 Related Literature – TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Other data sheets are available within the file: BUZ73

BUZ73A Datasheet PDF Download