P9NK60Z PDF – N-Ch, 600V, 7A, Power MOSFET – ST

This post explains for the MOSFET.

The Full Part Number is P9NK60Z, STP9NK60Z.

The function of this semiconductor is N-CHANNEL 600V, 0.85W, 7A, Power MOSFET.

Manufacturer: ST Microelectronics

Preview images :P9NK60Z pinout datasheet

Description

An N-channel, 600V, 7A power MOSFET refers to a specific type of power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that has an N-channel as the conducting channel and is designed to handle a maximum voltage of 600 volts and a continuous current of up to 7 amperes. MOSFETs are widely used in power electronic applications for their ability to efficiently switch and control high voltages and currents.

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based  PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Applications:
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

Features:

1. TYPICAL RDS(on) = 0.85 W
2. EXTREMELY HIGH dv/dt CAPABILITY
3. IMPROVED ESD CAPABILITY
4. 100% AVALANCHE RATED
5. GATE CHARGE MINIMIZED
6. VERY LOW INTRINSIC CAPACITANCES
7. VERY GOOD MANUFACTURING REPEATIBILITY

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P9NK60Z pdf mosfet

N-channel, 600V, 7A power MOSFETs are commonly used in various power applications such as motor drives, power supplies, inverters, lighting control, and other high-power circuits. They offer advantages such as low on-resistance (RDS(on)), fast switching speeds, and low gate drive requirements.

P9NK60Z PDF Datasheet


 

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CS20N60 PDF – 600V, 20A, N-Ch, MOSFET, TO-220AB

Part Number: CS20N60, CS20N60A8H, CS20N60AND, CS20N60ANH

Function: 600V, 20A, Silicon N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Huajing Microelectronics

Images:CS20N60 pdf pinout

Description

CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.

 

Features:

1. Fast Switching

2. Low ON Resistance(Rdson≤0.45Ω)

3. Low Gate Charge (Typical Data:61nC)

4. Low Reverse transfer capacitances(Typical: 20pF)

5. 100% Single Pulse avalanche energy Test

CS20N60 datasheet mosfet

Applications:

1. Power switch circuit of adaptor and charger. […]

 

CS20N60 PDF Datasheet