K2564 PDF – 600V, 8A, Power MOSFET – Shindengen

The Part Number is K2564, 2SK2564.

The function of this semiconductor is 600V, 8A, Power MOSFET.

The package : TO-220 Type

Manufacturer: Shindengen Electric

Images:

K2564 datasheet

Description:

The K2564 is 600V, 8A, Power MOSFET. A 600V, 8A power MOSFET refers to a specific type of power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) capable of handling a maximum voltage of 600 volts and a continuous current of up to 8 amperes. MOSFETs are widely used in various power electronic applications for their ability to efficiently switch and control high voltages and currents.

Features

1. Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
2. The static Rds(on) is small.
3. The switching time is fast.
4. Avalance resistance guranteed.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 8 A
4. Drain power dissipation : Pt = 50 W
5. Single pulse avalanche energy : Ias = 8 A
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C

K2564 pdf pinout

Power MOSFETs with a voltage rating of 600V and a current rating of 8A are commonly used in applications such as power supplies, motor drives, inverters, and other high-power circuits. They offer advantages such as low on-resistance (RDS(on)), fast switching speeds, and low gate drive requirements.

Applications:

1. Switching power supply of AC 100-200V input
2. Inverter
3. Power Factor Control Circuit

Other data sheets are available within the file: 2SK2564

K2564 PDF Datasheet

P65NF06 Datasheet – N-Ch, 60V, 60A, MOSFET, STP65NF06

Part Number: P65NF06, STP65NF06

Function: N-channel, 60V, 60A, MOSFET (Transistor)

Package: DPAK, TO-220 type

Manufacturer: STMicroelectronics

Images:P65NF06 pdf pinout

Description

P65NF06 is N-channel 60V, 11.5mΩ, Power MOSFET.

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Drain power dissipation : Ptot = 110 W

5. Single pulse avalanche energy : Eas = 390 mJ

6. Channel temperature: Tch = 175 °C

7. Storage temperature: Tstg = -55 to +175 °C

P65NF06 datasheet mosfet

Applications:

P65NF06 Datasheet

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