NPN

C2026 Datasheet PDF – 14V, 50mA, NPN Transistor

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What is C2026?

This is a silicon NPN bipolar junction transistor designed for general-purpose amplifier and switching applications. It has a maximum collector-base voltage of 30V, a maximum collector-emitter voltage of 14V, and a maximum collector current of 50mA.

Part Number: 2SC2026

Function: 50mA, 14V, NPN SILICON TRANSISTOR

Package: TO-92 Type

Manufacturer: NEC ( Renesas Technology )

Images :

C2026 datasheet

Description

This is 14V, 50mA, NPN Transistor. The C2026 is commonly used in audio amplifier circuits, power supply circuits, and switching circuits due to its low noise and high gain characteristics.

Features

1. NF : 3.0 dB Typ. @f = 500 MHz
2. Gpe : 15 dB Typ. @f = 50 MHz
3. fT : 2.0 GHz Typ.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V
2. Collector to Emitter Voltage: Vceo = 14 V
3. Emitter to Base Voltage: Vebo = 3.0 V
4. Collector Current: Ic = 50 mA
5. Total Dissipation : Pc = 250 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Pinouts:

components

Applications

1. Suitable for low noise amplifier in the VHF to UHF band.

Other data sheets are available within the file: 2SC2026

C2026 Datasheet PDF Download

C2026 pdf

C5706 PDF Datasheet – NPN Transistor – 2SC5706

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This post explains for the transistor.

The Part Number is C5706, 2SC5706.

The function of this semiconductor is 50V, 5A, NPN transistor.

Manufacturer: Sanyo Semiconductor

Preview images :C5706 pinout datasheet

Description

C5706 is 50V, 5A, NPN Epitaxial Planar Silicon Transistor.

 

Features:

• Adoption of FBET, MBIT process.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 5 A

5. Collector Dissipation : Pc = 0.8 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

C5706 pdf transistor

Characteristics:

C5706 PDF Datasheet