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C3896 Datasheet PDF – Vceo=800V, 8A, NPN Transistor

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Part Number: C3896, 2SC3896

Function: 800V, 8A, NPN Transistor

Package: TO-3PML

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

C3896 datasheet

Description

This is NPN Triple Diffused Planar Silicon Transistor.

Features

1. High speed (tf=100ns typ).

2. High reliability (Adoption of HVP process).

3. High breakdown voltage (VCBO=1500V).

4. Adoption of MBIT process.

components

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-to-Base Voltage : VCBO = 1500 V
2. Collector-to-Emitter Voltage : VCEO = 800 V
3. Emitter-to-Base Voltage : VEBO = 6 V
4. Collector Current : IC = 8 A
5. Collector Current (Pulse) : ICP = 25 A

Applications

1. Ultrahigh-Definition CRT Display Horizontal Deflection Output

Other data sheets are available within the file: 2SC3896

C3896 Datasheet PDF Download


C3896 pdf

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2N3440 Datasheet PDF – Vcbo=300V, 1A, NPN Transistor

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Part Number: 2N3440

Function: HIGH VOLTAGE NPN TRANSISTOR

Package: TO39, TO-205AD

Manufacturer: Semelab – > TT Electronics plc

Image and Pinouts:

2N3440 datasheet

 

Description

This is 300V, 1A, High Voltage NPN Transistor.

These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

Features

1. Hermetic TO39 Package
2. High Voltage
3. Ideally suited for drivers in high voltage low current inverters, switching and series regulators
4. High Reliability Screening Options Available

components

Absolute Maximum Ratings :

1. Collector-Base Voltage: Vcbo = 300 V

2. Collector-Emitter Voltage: Vceo = 250 V

3. Emitter-Base Voltage: Vebo = 7 V

4. Collector Current-Continuous : Ic = 1.0 A

5. Base Current : Ib = 0.5 A

6. Total Power Dissipation: Pd = 5 W

 

Other data sheets are available within the file: 2N3439, N3439, N3440

 

2N3440 Datasheet PDF Download

2N3440 pdf