PNP

BD140 Datasheet – 80V, 1.5A, PNP Power Transistor – NXP

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Part Number: BD140

Function: -80V, -1.5A, PNP SILICON TRANSISTOR

Package: TO-126, SOT32 Type

Manufacturer: NXP, Philips

Image

bd140-pnp-transistor

Description

PNP power transistor in a TO-126; SOT32 plastic package.

NPN complements: BD135, BD137 and BD139.

Limiting Values

1. Collector-base voltage : Vcbo = -100V

2. Collector-emitter voltage : Vceo = -80V

3. Emitter-base voltage : Vceo = -5V

4. Collector current (DC) : Ic = -1.5A

Pinout

bd140-datasheet-pinout

 

Features

1. High current (max. 1.5 A)
2. Low voltage (max. 80 V).

Applications

General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.

 

BD140 Datasheet


 

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B817 Transistor – (-)140V, (-)12A, Silicon PNP – Sanyo

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This is one of the PNP transistor types.

Part Number: B817, 2SB817

Function: – 140V, – 12A, Silicon PNP transistor

Package: TO-3P Type

Manufacturer: Sanyo Semicon Device

B817 transistor Image and pinouts :

B817 Transistor

Description

The descriptions in parentheses are for the B817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047.

For 60W audio frequency amplifier output stage, Complementary to 2SD1047.

 

Features

1.Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).

2. Wide ASO because of on-chip ballast resistance.

3. Good depenedence of fT on current and excellent  high frequency responce.

4. 140V / 12A / AF 60W Output Applications

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = – 160 V
2. Collector-to-Emitter Voltage : VCEO = – 140 V
3. Emitter-to-Base Voltage : VEBO = – 6 V
4. Collector Current : IC = – 12 A
5. Collector Current (Pulse) : ICP = – 15 A
6. Collector Dissipation : PC = 100 W

B817 Datasheet

B817 pdf


 

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