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A1941 Datasheet – (-)140V, PNP Power Transistor – Toshiba

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This is one of the transistor types.

Part Number: A1941

Function: Silicon PNP Triple Diffused Type

Package: TO- 3PN

Manufacturer: Toshiba

Image

a1941-pnp-power-transistor

Features

1. High breakdown voltage: VCEO = −140 V (min)
2. Complementary to 2SC5198
3. Recommended for 70-W high-fidelity audio frequency amplifier output stage.

 

Pinout

a1941-datasheet-pinout

 

Absolute Maximum Ratings (Tc = 25°C)

1. Collector-base voltage VCBO −140 V
2. Collector-emitter voltage VCEO −140 V
3. Emitter-base voltage VEBO −5 V
4. Collector current IC −10 A
5. Base current IB −1 A
6. Collector power dissipation (Tc = 25°C) PC 100 W
7. Junction temperature Tj 150 °C
8. Storage temperature range Tstg −55 to 150 °C

 

Reference PDF : https://www.electronic.it/open2b/var/product-files/567.pdf

A1941 Datasheet


 

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2SC1678 Datasheet PDF – 65V, Silicon NPN Power Transistor

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Part Number: 2SC1678

Function: NPN SILICON PLANAR EPITAXIAL POWER TRANSISTOR

Package: TO-220 Type

Manufacturer: SavantIC Semiconductor

Pinouts:
2SC1678 datasheet

Description

1. With TO-220 package
2. Low collector saturation voltage

 

Absolute maximum ratings

1. Collector-base voltage Open emitter : VCBO = 65 V
2. Collector-emitter voltage Open base : VCEO = 65 V
3. Emitter-base voltage Open collector : VEBO = 4 V
4. Collector current : IC = 3 A
5. Base current : IB = 0.4 A
6. Emitter current : IE = -3 A
7. Collector power dissipation TC=25’C : PC = 10 W

Applications

1. 27MHz RF power amplifier applications

Other data sheets are available within the file: 2SC1678,C1678

 

2SC1678 Datasheet PDF Download

2SC1678 pdf

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