Part Number: 33N10, FQP33N10

Function: 100V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Infineon Technologies

Images:

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. […]

Pinout

Features

1. 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
2. Low gate charge ( typical 38 nC)
3. Low Crss ( typical 62 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. 175°C maximum junction temperature rating

Absolute Maximum Ratings ( Tc = 25’C )

1. Drain-Source Voltage : Vdss = 100 V
2. Drain Current : Id = 33 A
3. Drain Current – Pulsed : Idm = 132 A
4. Gate-Source Voltage : Vgss = +- 25V
5. Single Pulsed Avalanche Energy : Eas = 435 mJ

33N10 Datasheet