Transistor archives - Page 103 of 2673

Description

The PF610BL is 100V, 0.9A, N-Channel Enhancement Mode MOSFET.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 100 V

2. Gate to source Voltage: VGSS = ± 20 V

3. Drain current: ID = 0.9 A

4. Power Dissipation: Pd = 1.3 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

This post explains for the MOSFET.

The Part Number is IRF3205.

The function of this semiconductor is N-Channel MOSFET Transistor.

The package is TO-220C Type

Manufacturer: Inchange Semiconductor

Images:

IRF3205 transistor

Description

IRF3205 is 55V, 110A, N-Channel MOSFET.

1. Static drain-source on-resistance : RDS(on) ≤8.0mΩ

2. Enhancement mode

3. Fast Switching Speed

4. 100% avalanche tested

5. Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF3205 pinout

IRF3205 pinout datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 110 A

4. Total Dissipation: Pd = 200 W (Ta = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. reliable device for use in a wide variety of applications