This post explains for the MOSFET.

The Part Number is 6R099C6.

The function of this semiconductor is 650V, Metal Oxide Semiconductor Field Effect Transistor.

The package is TO-263, TO-220, TO-247 Type

Manufacturer: Infineon Technologies

Preview images :

Description

6R099C6 is 650V, CoolMOS Power Transistor. CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Features

• Extremely low losses due to very low FOM Rdson*Qg and Eoss

• Very high commutation ruggedness

• Easy to use/drive •

 

2 page

Applications:

1. Adapter

2. LCD & PDP TV

3. Server

4. UPS

6R099C6 PDF Datasheet

This post explains for the transistor.

The Part Number is 3SK74.

The function of this semiconductor is 20V, 25mA, MOSFET.

Manufacturer: NEC Electronics

See the preview image and the PDF file for more information.

Image

Description

The 3SK74 is 20V, 25mA, N-Channel Silicon dual-gate MOSFET. A dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that has two gate terminals instead of the usual one gate terminal found in standard MOSFETs. These dual-gate MOSFETs provide additional control and flexibility in electronic circuit design.

Features

1. Suitable for use as RF amplifier & Mixer in VHF TV Tuner

2. Low Crss : 0.03pF Typ.

3. High PG : 22dB Typ.

4. Low NF : 2.0dB Typ.

 

Absoulte Maximum ratings:

1. Drain to Source Voltage : Vdsx = 20 V

2. Gate1 to Source Voltage : Vg1s = ± 10 V

3. Gate2 to Source Voltage : Vg2s = ± 10 V

4. Drain Current : Id = 25 mA

5. Total Power Dissipation : Pt – 200 mW

3SK74 PDF Datasheet

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