Part Number: 2SA1967

Function: – 900V, – 10mA, PNP Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

This is NPN Triple Diffused Planar Silicon Transistor.

Features

1. High breakdown voltage (Vceo min=–900V).

2. Small Cob(Cobtyp=2.2pF).

3. High reliability (Adoption of HVP process).

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 900 V
2. Collector to Emitter Voltage: Vceo = – 900 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 10 mA
5. Total Dissipation : Pc = 1.75 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High-Voltage Amplifier

2. High-Voltage Switching

2SA1967 Datasheet PDF Download

Other data sheets are available within the file: 2SA-1967, A1967

Part Number: 2SA1536

Function: – 70V, – 300mA, PNP Transistor

Package: TO-126ML Type

Manufacturer: SANYO (Panasonic)

Pinouts:

 

Description

This is a PNP Epitaxial Planar Silicon Transistor.

Features

1. High fT: fT=600MHz.

2. High breakdown voltage : VCEO=70Vmin.

3. Small reverse transfer capacitance and excellent high -frequency characteristic
: Cre =1.9pF/NPN, 2.4pF/PNP.

4. Complementary PNP and NPN types.

5. Adoption of FBET process.

6. Micaless type.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 80 V

2. Collector to Emitter Voltage: Vceo = – 70 V

3. Emitter to Base Voltage: Vebo = – 3 V

4. Collector Current: Ic = – 300 mA

5. Collector Dissipation : Pc = 1.3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High-Definition CRT Display Video Output

2. High breakdown voltage : VCEO=70Vmin.

2SA1536 Datasheet PDF Download

Other data sheets are available within the file: 2SC3951, A1536, C3951