Transistor

2SC3781 Transistor – 120V, 400mA, Sanyo, NPN ( PDF )

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Part Number: 2SC3781

Function: 120V, 40mA, NPN Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SC3781 datasheet

 

Description

This is a NPN Epitaxial Planar Silicon Transistor.

 

Features

1. High fT(fTtyp=500MHz).

2. High breakdown voltage (VCEO≥120V).

3. Small reverse transfer capacitance and excellent HF response
: Cre =2.6pF (NPN), 3.9pF (PNP).

4. Complementary PNP and NPN types.

5. Adoption of FBET process.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 120 V

2. Collector to Emitter Voltage: Vceo = 120 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 400 mA

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

Applications

1. Video output.

2. Color TV chroma output.

3. Wide-band amp

4. Ultrahigh-Definition CRT Display Video Output

 

2SC3781 Datasheet PDF Download


2SC3781 pdf

Other data sheets are available within the file: 2SA1475, A1475, C3781

IRFZ46N MOSFET – 55V, 53A, Transistor ( Datasheet PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRFZ46N

Function: 55V, 53A, HEXFET Power MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier ( www.irf.com )

Image
IRFZ46N mosfet datasheet

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Absolute Maximum Ratings at Tc = 25°C

1. Continuous Drain Current : Vgs = 53 A
2. Pulsed Drain Current : Idm = 180 W
3. Power Dissipation: Pd = 107 V
4. Gate-to-Source Voltage : Vgs = ± 20 V
5. Avalanche Current : Iar = 28 A
6. Operating Junction and Storage Temperature Range : Tj, Tstg = -55 to + 175 °C

Pinouts

IRFZ46N transistor pinout

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Application

Other data sheets are available within the file: IRFZ46

IRFZ46N MOSFET Transistor Datasheet

IRFZ46N pdf


 

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