Semiconductor Informations
Part Number: BUZ90A
Function: 4A, 600V, SIPMOS Power Transistor
Package : TO-220AB Type
Manufacturer: Siemens AG
Image and Pinouts:
1. N channel
2. Enhancement mode
3. Avalanche-rated
Absolute maximum ratings
1. Maximum Drain-Source Voltage : Vds = 600 V
2. Maximum Gate-Source Voltage : Vgs = 20 V
3. Maximum Drain Current : Id = 4 A
4. Maximum Power Dissipation: Pd = 75 W
Other data sheets are available within the file: BUZ90, C67078-S1321-A3
Part Number: KD502
Function: 60V, 20A, NPN Transistor ( Tranzistory )
Package: TO-3 Type
Manufacturer: Tesla
Images:
This is 60V, 20A, NPN Transistor.
Material of Transistor: Si , Polarity : NPN Type
Absolute Maximum Ratings (Ta = 25°C) :
1. Maximum Collector Power Dissipation (Pc): 150 W
2. Maximum Collector-Base Voltage |Vcb|: 70 V
3. Maximum Collector-Emitter Voltage |Vce|: 60 V
4. Maximum Emitter-Base Voltage |Veb|: 5 V
5. Maximum Collector Current |Ic max|: 20 A
6. Max. Operating Junction Temperature (Tj): 150 °C
7. Transition Frequency (ft): 2 MHz
8. Forward Current Transfer Ratio (hFE), MIN: 40
Pinout
Applications:
1. Audio frequency stage, power transistor
