13N60M2 Datasheet – N-Ch, 600V, 11A, MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 13N60M2

Function: N-Channel, 600V, 11A, MOSFET (Transistor)

Package: DPAK, D2PAK

Manufacturer: STMicroelectronics

Images:

13N60M2 datasheet replacement

Description

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Pinout

mosfet 13N60M2 pinout

Features

1. Extremely low gate charge
2. Excellent output capacitance (COSS) profile
3. 100% avalanche tested
4. Zener-protected

Absolute Maximum Ratings (Ta = 25°C)

1. Gate to source voltage: VGSS = ± 25 V
2. Drain current: ID = 11 A
3. Drain power dissipation : Ptot = 110 W
4. Channel temperature: Tch = 150 °C
5. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching applications

Other data sheets are available within the file: STB13N60M2, STD13N60M2

13N60M2 Datasheet

13N60M2 pdf

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IRF9540N Datasheet – P-Ch, (-)100V, MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRF9540N, F9540N

Function: Vdss = -100V, HEXFET Power MOSFET ( Transistor )

Package: TO-220AB Type

Manufacturer: IR ( International Rectifier ), Infineon ( https://www.infineon.com/ )

Images

IRF9540N mosfet datasheet

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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Pinout

IRF9540N pinout circuit

Features

1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. P-Channel
6. Fully Avalanche Rated

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings (Tc = 25°C)

1. Gate to source voltage: VGSS = ± 20 V
2. Drain current: ID = – 23 A
4. Drain power dissipation : PD = 140 W
5. Single pulse avalanche energy : Eas = 430 mJ
6. Avalanche curren : Iar = -11 A
7. Repetitive avalanche energy : Ear = 14 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +175 °C

 

IRF9540N Datasheet

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