Transistor

FGH60N60SFD Datasheet – 600V, 60A, IGBT (Transistor)

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Part Number: FGH60N60SFD, G60N60

Function: 600 V, 60 A Field Stop IGBT

Package: TO-247 Type

Manufacturer: Fairchild Semiconductor

Pinouts:

FGH60N60SFD datasheet

 

Description

Using novel field stop IGBT technology, Fairchild’s field stop GBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ng losses are essential.

Features

• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A
• High Input Impedance
• Fast Switching
• RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC

Other data sheets are available within the file: 60N60SFD, FGH60N60SFDTU, G60N60

FGH60N60SFD Datasheet PDF Download


FGH60N60SFD pdf

 

10N60C Transistor – FQP10N60C ( 600V, MOSFET )

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This post explains for the MOSFET.

The Part Number is 10N60C, FQP10N60C, FQPF10N60C.

The function of this semiconductor is 600V, MOSFET.

The package is TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Images

10N60C datasheet

Description

This is 600V, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

10N60C pinout

10N60C pinout transistor

Features

1. 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
2. Low gate charge ( typical 44 nC)
3. Low Crss ( typical 18 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability

 

10N60C Datasheet

10N60C pdf

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