Transistor

K2608 PDF Datasheet – 900V, 3A, N-Ch, MOSFET – 2SK2608

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This post explains for the MOSFET.

The Part Number is K2608, 2SK2608.

The function of this semiconductor is 900V, 3A, N-Channel MOSFET.

Manufacturer: Toshiba Semiconductor, Package: TO-220AB type

Preview images :

K2608 pdf mosfet

 

Description

The K2608 is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.)

2. High forward transfer admittance : |Yfs|= 2.6 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

K2608 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3 A

4. Drain Power Dissipation: Pd = 100 W (Ta = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K2608 PDF Datasheet

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A1024 PDF Datasheet – 150V, 50mA, PNP Transistor, TO-92

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This post explains for the transistor.

The part number is A1024.

The package is TO-92 Type.

The function of this semiconductor is -150V, -50mA, PNP Transistor.

Manufacturer: FGX

Product image :

A1024 PNP Transistor

Description

A1024 is – 150V, – 50mA, PNP Silicon Epitaxial Planar Transistor.

PNP transistors comprise the following key components:

PNP transistors control the flow of a large current (collector current) between the emitter and collector using a small current applied to the base (base current). When a base current flows, the PNP transistor permits the flow of electrons from the emitter to the collector, resulting in an increase in collector current. Reducing the base current reduces the collector current. Consequently, PNP transistors are valuable electronic components for controlling large output currents with small input currents.

PNP transistors find applications in amplifiers, switches, amplitude modulators, power amplifiers, and various circuit designs, playing a crucial role in electronic devices and circuitry.

The transistor is subdivided into two groups, O and Y according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.

Pinouts

A1024 pinout datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 150 V

2. Collector to Emitter Voltage: Vceo = -150 V

3. Emitter to Base Voltage: Vebo = -5V

4. Collector Current: Ic = – 50mA

5. Total Dissipation : Ptot = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Other data sheets are available within the file: 2SA1024

A1024 PDF Datasheet


 

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