Transistor

BD778 PDF Datasheet – 60V, 4A, Darlington PNP Transistor

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Part Number: BD778

Function: Darlington Complementary PNP Transistor

Package: TO-225AA Type

Manufacturer: Motorola Inc

Images:BD778 pdf transistor

Description

The BD778 is Plastic Darlington Complementary Silicon Power Transistor. This transistor is . designed for general purpose amplifier and high–speed switching applications.

The Darlington complementary transistor configuration consists of two BJTs connected in a way that the emitter of the first transistor is connected to the base of the second transistor, and the collector of the second transistor is connected to the collector of the first transistor. This creates a “Darlington pair” which acts as a single transistor with very high current gain, typically in the range of several thousand.

The Darlington configuration is used in applications where high current gain and high input impedance are required, such as in audio amplifiers, power regulators, and motor control circuits

Features

1. High DC Current Gain

2. Reverse Voltage Protection Diode

3. Monolithic Construction with Built–in Base–Emitter output Resistor

BD778 datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 4 A

5. Total Device Dissipation: Pd =15 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Other data sheets are available within the file: BD776, BD777, BD780

BD778 PDF Datasheet

P60NF06 Datasheet – 60V, 60A, Power MOSFET – ST ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: P60NF06, STP60NF06

Function : N-Channel, 60V, 0.014Ohm, 60A, Power MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: ST Microelectronics

Image

P60NF06 mosfet st

 

Description

This Power Mosfet series realized with STMicro electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

 

Pinout

P60NF06 datasheet pinout

 

Features

1. TYPICAL RDS(on) = 0.014Ω

2.  EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4.  APPLICATION ORIENTED CHARACTERIZATION

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 60 A

4. Total Dissipation: Pd = 110 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

P60NF06 Datasheet


 

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