P6NK90Z Datasheet – N-channel 900V – 1.56 Ohm – 5.8A – ST

Part Number: P6NK90Z, STP6NK90Z

Function: N-channel 900V – 1.56 Ohm – 5.8A

Manufacturer: STMicroelectronics

Image and pinout :
P6NK90Z datasheet

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.

components

P6NK90Z Datasheet PDF Download

P6NK90Z pdf

Other data sheets are available within the file: B6NK90Z, P6NK90Z, STB6NK90Z, STP6NK90Z

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K7A60W Datasheet – 600V, 7A, N-ch, MOSFET, TK7A60W

Part Number: K7A60W, TK7A60W

Function : 600V, 7A, N-ch, MOSFET

Package: TO-220SIS Type

Manufacturer: Toshiba

Image
K7A60W mosfet TK7A60W

Description

This is 600V, 7A, Silicon N-Channel MOSFET.

Features

1. Low drain-source on-resistance: RDS(ON) = 0.5 Ω(typ.)  by used to Super Junction Structure : DTMOS

2. Easy to control Gate switching

3. Enhancement mode: Vth= 2.7 to 3.7 V (V DS = 10 V, ID = 0.35 mA)

Pinout

K7A60W datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Power Dissipation: Pd = 30 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

K7A60W Datasheet


 

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