Transistor

C2026 Transistor – 14V, 50mA, NPN, Pinout ( 2SC2026 )

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Part Number: C2026, 2SC2026

Function: 14V, 50mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Inchange Semiconductor

Images:C2026 pdf pinout

Description

The C2026 is 14V, 50mA, Silicon NPN RF Transistor. 

Features

1. Low Noise : NF= 3.0dB TYP. @ f= 500MHz

2. High Power Gain : Gpe= 15dB TYP. @ f= 500MHz

3. High Gain Bandwidth Product : fT= 2.0GHz TYP.

C2026 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 14 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 0.25 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Designed for use in low noise amplifiers in the VHF~UHF band.

C2026 PDF Datasheet

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K3115 PDF – 600V, 6A, N-ch, Power MOSFET – 2SK3115

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Part Number: K3115, 2SK3115

Function: 600V, 6A, N-channel Power MOSFET

Package: TO-220 Type

Manufacturer: NEC

Images:K3115 pinout pdf

Description

The K3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Features

1. Low gate charge : QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)

2. Gate voltage rating ±30 V

3. Low on-state resistance : RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)

4. Avalanche capability ratings

K3115 datasheet mosfet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K3115 PDF Datasheet