Semiconductor Informations
Part Number: RJP63F3A
Function: 630V, 40A, N-channel IGBT
Package: TO-220FL Type
Manufacturer: Rensas
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This is 630V, 40A, Silicon N Channel IGBT.
1. Trench gate and thin wafer technology (G6H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 100 ns typ
4. Low leak current ICES= 1 μA max
5. Isolated package TO-220FL
JP63F3A = RJP63F3DPP-M0
Applications:
1. High Speed Power Switching
This is one of the transistor types.
Part Number: D5011, 2SD5011
Function : 800V, 3.5A, NPN Power Transistor
Package: TO-3PML Type
Manufacturer: Inchange Semiconductor
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This is 800V, 3.5A, Silicon NPN Power Transistor.
1. High Breakdown Voltage : VCBO= 1500V (Min)
2. High Switching Speed
3. High Reliability
4. Built-in Damper Diode
Pinout
Absolute Maximum Ratings ( Ta = 25°C )
1. Collector-Base Voltage : VCBO = 1500 V
2. Collector-Emitter Voltage : VCEO = 800 V
3. Emitter-Base Voltage : VEBO = 6 V
4. Collector Current- Continuous : IC = 3.5 A
5. Collector Current-Peak : ICM = 10 A
6. Collector Power Dissipation ( @ TC=25℃ ) : PC = 50 W
Applications
1. Designed for color TV horizontal output
