IRG4PC50FD Datasheet PDF – 600V, 70A, IGBT, Transistor

Part Number: IRG4PC50FD

Function: 600V, 70A, Fast CoPack IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Pinouts:

IRG4PC50FD datasheet

 

Description

This is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.

Benefits :

1. Generation -4 IGBTs offer highest efficiencies available

2. IGBTs optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing

4. Designed to be a “drop-in” replacement for equivalent
industry-standard Generation 3 IR IGBTs

Features

1. Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A

4. Collector dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRG4PC50FDPBF

 

IRG4PC50FD Datasheet PDF Download


IRG4PC50FD pdf

IXGH50N60B Datasheet PDF – 600V, 75A, IGBT, Transistor

Part Number: IXGH50N60B

Function: 600V, 75A, IGBT

Package: TO-247AD Type

Manufacturer: IXYS CORPORATION

Image and Pinouts:

IXGH50N60B datasheet

Description

This is 600V, 75A, HiPerFAST IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. International standard packages

2. High frequency IGBT

3. Latest generation HDMOSTM process

4. High current handling capability

5. MOS Gate turn-on – Drive simplicity

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 75 A

4. Collector dissipation : Pc = 300 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. AC motor speed control

2. DC servo and robot drives

3. DC choppers

4. Uninterruptible power supplies (UPS)

5. Switch-mode and resonant-mode power supplies

Advantages :

1. Easy to mount with 1 screw (insulated mounting screw hole)

2. Switching speed for high frequency applications

3. High power density

Other data sheets are available within the file:

IXGJ50N60B, IXGK50N60B, IXGT50N60B

 

IXGH50N60B Datasheet PDF Download


IXGH50N60B pdf