D13009K Datasheet PDF – 12A, 400V, NPN, Transistor

This is high voltage fast-switching NPN power transistor. D13009K is an NPN bipolar junction transistor that is a high voltage fast switching power device. It is widely employed for switching and amplification purposes. 

Part Number: D13009K

Function: 12A, 400V, NPN bipolar power transistor

Package: TO-220, TO-3P Type

Manufacturer: Jilin Sino Microeletronics

Image and Pinouts

D13009K datasheet

 

Description

This device comes with high breakdown voltage and carries high current capability. It is a highly reliable product and features a high switching speed.

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Ultrasonic Generator

7. High-frequency power conversion

8. General power amplifier circuit

Ordering Informations

components

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Absolute maximum ratings ( Ta=25°C )

1. Collector- Emitter Voltage: Vces = 700 V ( Vbe=0 )

2. Collector to Emitter Voltage: Vceo = 400 V ( Ib=0 )

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 12 A

5. Collector Dissipation: Pc = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Other data sheets are available within the file: 3DD13009K

D13009K Datasheet PDF Download


D13009K pdf

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RJK0822 Datasheet PDF – 80V, 8A, N-channel MOSFET

Part Number: RJK0822, RJK0822SPN

Function:  80V, 8A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Renesas

Image :

RJK0822 Image

Description

This is 80V, 80A, Silicon N Channel Power MOSFET.

Pinouts:

RJK0822 Datasheet

Features

1. Low on-resistance : 2. RDS(on) = 7.9mW typ.(at VGS = 10V)

2. High speed switching

3. Low drive current

4. Suitable for motor drive, DC-DC converter, power switch and solenoid drive

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 80 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 80 A

4. Channel dissipation: Pch = 100 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power Switching

Other data sheets are available within the file: RJK0822SPN-00, RJK0822SPN

RJK0822 Datasheet PDF

RJK0822 pdf

 

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