Transistor archives - Page 408 of 2673

Description

This is 20V, 0.7A, N-Channel PowerTrench MOSFET.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON)and gate charge (QG) in a small package.

Features

1. 0.7 A, 20 V

(1) RDS(ON) = 300 m @ VGS = 4.5 V
(2) RDS(ON) = 400 m @ VGS = 2.5 V

2. Low Gate Charge (1.1 nC Typical)

3. High Performance Trench Technology for Extremely Low RDS(ON)

4. Compact Industry Standard SC70−6 Surface Mount Package

5. These Devices are Pb−Free and are RoHS Compliant

Applications:

1. DC/DC converter

2. Power management

3. Loadswitch

Other data sheets are available within the file: FDG6335

Part Number: K2847

Function: 900V, 8A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image:

K2847 datasheet

Description

This is 900V, 8A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance : RDS(ON) = 1.1 Ω(typ.)

2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)

3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinouts:

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Drain Power Dissipation: Pd = 85 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. DC-DC Converter and Motor Drive

Other data sheets are available within the file: 2SK2847

Transistor

FDG6335N Datasheet PDF – 20V, 0.7A, N-Ch, MOSFET, Transistor

Description

Features

FDG6335N Datasheet PDF Download

K2847 Datasheet PDF – 900V, 8A, N-Ch, MOSFET – Toshiba

Description

Features

K2847 Datasheet PDF Download