Transistor

K2847 Datasheet PDF – 900V, 8A, N-Ch, MOSFET – Toshiba

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Part Number: K2847

Function: 900V, 8A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image:

K2847 datasheet

Description

This is 900V, 8A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance  : RDS(ON) = 1.1 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 7.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinouts:

components

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Drain Power Dissipation: Pd = 85 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. DC-DC Converter and Motor Drive

 

Other data sheets are available within the file: 2SK2847

K2847 Datasheet PDF Download


K2847 pdf

IXGH60N60C3 Datasheet PDF – 600V, 60A, IGBT, Transistor

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Part Number: IXGH60N60C3

Function: 600V, 60A, High Speed IGBT

Pacakge : TO-247AD Type

Manufacturer: IXYS CORPORATION

Image and Pinouts:

IXGH60N60C3 datasheet

 

Description

This is 600V, 60A, High Speed PT IGBTs for 40-100kHz switching.

1. Vces = 600 V

2. Ic110 = 60A

Features

1. Optimized for Low Switching Losses

2. Square RBSOA

3. Avalanche rated

4. International Standard Package

Advantages :

1. High Power Density

2. Low Gate Drive Requirement

Applications:

1. High Frequency Power Inverters

2. UPS

3. Motor Drives

4. SMPS

5. PFC Circuits

6. Battery Chargers

7. Welding Machines

8. Lamp Ballasts

Other data sheets are available within the file:

60N60C3, G60N60, IXGH60N60C3D1

 

IXGH60N60C3 Datasheet PDF Download


IXGH60N60C3 pdf