Transistor

D1682 Transistor – 50V, 2.5A, NPN, 2SD1682, Sanyo ( PDF )

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Part Number: D1682

Function: 50V, 2.5A, NPN Transistor

Package: TO-126ML Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

D1682 datasheet

Description

This is NPN epitaxial planar silicon transistor.

 

Features

1. Adoption of FBET and MBIT processes.

2. Low saturation voltage.

3. Large current capacity and wide ASO.

 

Application Circuits :

components

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 2.5 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Application:

1. High-speed switching

 

D1682 Datasheet PDF Download


D1682 pdf

Other data sheets are available within the file: 2SB1142, 2SD1682, B1142

GB75DA120UP Datasheet PDF – 1200V, 75A, IGBT, Transistor

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Part Number: GB75DA120UP

Function: Ultrafast IGBT, 1200V, 75 A

Package: SOT-227 Type

Manufacturer: Vishay Semiconductors

Image:

GB75DA120UP datasheet

 

Description

The GB75DA120UP is 1200V, 75A, Ultrafast IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

IGBTs are widely used in power electronic applications, such as motor drives, renewable energy systems, and power conversion systems, due to their high efficiency, fast switching speed, and low switching losses. They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

Features

• NPT Generation V IGBT technology

• Square RBSOA

• HEXFRED low Qrr, low switching energy

• Positive VCE(on) temperature coefficient

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

BENEFITS :

• Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

Other data sheets are available within the file: 75DA120UP

 

GB75DA120UP Datasheet PDF Download


GB75DA120UP pdf