BLW86 Datasheet PDF – HF/VHF Power Transistor – Philips

Part Number: BLW86

Function: HF / VHF Power Transistor

Package: SOT-123 Type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Image and Pinouts:

BLW86 datasheet

 

Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFEgroups are available on request. It has a 3/8″ flange envelope with a ceramic cap. All leads are isolated from the flange.

Limiting values in accordance with the Absolute Maximum System :

1. Collector-emitter voltage (VBE = 0) : VCESM max. = 65 V

2. Collector-emitter voltage (open base) : VCEO max. = 36 V

3. Emitter-base voltage (open-collector) : VEBO max. = 4 V

4. Collector current (average) : IC(AV) max. = 4 A

5. Collector current (peak value); f > 1 MHz : ICM max. = 12 A

 

BLW86 Datasheet PDF

BLW86 pdf

 

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2SK2315 Datasheet PDF – 60V, 2A, N-Ch, MOSFET – Renesas

Part Number: 2SK2315

Function: 60V, 2A, N-Channel MOSFET

Package: UPAK Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:

2SK2315 datasheet

 

Description

This is 60V, 2A, Silicon N-Channel MOSFET.

Features

1. Low on-resistance

2. Low drive current

3. 2.5 V gate drive device can be driven from 3 V source.

4. Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Absolute Maximum Ratings

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ±20 V

3. Drain current: ID = 2 A

4. Drain peak current : ID(pulse) = 4 A

5. Body to drain diode reverse drain current : IDR = 2 A

6. Channel dissipation: Pch*2 = 1 W

 

Applications:

1. High speed switching

Other data sheets are available within the file: K2315

2SK2315 Datasheet PDF Download


2SK2315 pdf