IRLB4132 Datasheet PDF – 30V, 150A, HEXFET MOSFET

Part Number: IRLB4132

Description

30V, 150A, HEXFET Power MOSFET

Package: TO-220 Type

Manufacturer: IRF ( http://www.irf.com )

Image:

IRLB4132 image

Description

This is 30V, HEXFET Power MOSFET.

Features

1. With low gate drive requirements
2. Easy to drive ·100% avalanche tested
3. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications:

1. Optimized for UPS/Inverter Applications
2. Low Voltage Power Tools

Benefits :

1. Best in Class Performance for UPS/Inverter
2. Very Low RDS(on) at 4.5V VGS
3. Ultra-Low Gate Impedance
4. Fully Characterized Avalanche Voltageand Current
5. Lead-Free

Pinouts:

IRLB4132 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 150 A
4. Drain power dissipation : PD = 140 W
8. Channel temperature : Tj = -55 ~ 175 °C
9. Storage temperature: Tstg = -55 to +175 °C

IRLB4132 Datasheet


 

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2SD667A Datasheet PDF – 100V, 1A, NPN Transistor

Part Number: 2SD667A

Function: 100V, 1A, NPN Transistor

Package: TO-92MOD Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:
2SD667A datasheet

Description

The 2SD667A is 100V, 1A, Silicon NPN Epitaxial Transistor.

1. Bipolar Junction:

NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. High Input Impedance:

NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

3. Inverted Output:

NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.

 

Applications:

1. Low frequency power amplifier

2. Complementary pair with 2SB647/2SB647A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage: VCBO = 120 V
2. Collector to emitter voltage: VCEO = 100 V
3. Emitter to base voltage: VEBO = 5 V
4. Collector current: IC = 1 A
5. Collector power dissipation: PC = 0.9 W

Other data sheets are available within the file: 2SD667, D667, D667A

2SD667A Datasheet PDF Download


2SD667A pdf