Transistor

MMBT2222A Datasheet PDF – 50V, 0.6A, NPN Transistor – Cystek

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Part Number: MMBT2222A

Function: 50V, 0.6A, NPN Transistor

Package: SOT-23 Package

Manufacturer: CYStech Electronics Corp

Image

MMBT2222A npn transistor

 

Description

This is 50V, 0.6A, General Purpose NPN Epitaxial Planar Transistor.

The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application.

Features

1. High IC(Max), IC(Max)= 0.6A.

2. Low VCE(sat), Typ. VCE(sat)= 0.2V at IC/IB= 500mA/50mA. Optimal for low Voltage operation.

3. Complementary to MMBT2907A.

4. Pb-free package

 

Pinout and Symbol :

MMBT2222A datasheet pinout

 

Absolute Maximum Ratings (Ta=25°C)

1. Collector-Base Voltage : VCBO = 75  V

2. Collector-Emitter Voltage : VCEO = 50  V

3. Emitter-Base Voltage :  VEBO = 6  V

4. Collector Current : IC = 0.6  A

5. Power Dissipation (TA=25°C) : PD = 225 mW

 

MMBT2222A Datasheet PDF

MMBT2222A pdf


 

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STK630F PDF Datasheet – Vdss=200V, Power MOSFET – AUK

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Part Number: STK630F, Marking Information : STK630

Function: 200V, 9A, Power MOSFET

Package: TO-220F-3L Type

Manufacturer: AUK Semiconductor

Images:
STK630F MOSFET

Description

The STK630F is Vdss=200V, Id=9A, Power MOSFET. A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of field-effect transistor designed to handle high power and voltage levels. It is commonly used in power electronics applications, such as power supplies, motor control, and switching circuits.

Power MOSFETs are advantageous over other power switching devices such as bipolar transistors or thyristors because they have a lower on-state resistance, which results in lower power losses and higher efficiency. Additionally, they can be driven with low voltage signals, making them compatible with digital circuits.

Features

• Avalanche rugged technology.
• Low input capacitance.
• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.
• Low RDS(on) : 0.30Ω(Typ.)

[…]

 

Pinout

STK630F datasheet pinout

Absolute maximum ratings

1. Drain-source voltage: VDSS = 200 V

2. Gate-source voltage: VGSS = ±30 V

3. Drain current (DC) : Id = 9 A (Tc = 25°C)

4. Drain current (Pulsed) : IDP = 36 A

5. Drain power dissipation (TC=25℃) : PD = 30 W

 

STK630F PDF Datasheet


 

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