Transistor

C3198 Datasheet PDF – 50V, 0.15mA, NPN Transistor – Elite

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This is one of the transistor types.

Part Number: C3198

Function: 50V, 0.15mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Elite

Image

c3198-npn-transistor

Description

This is 50V, 150mA, NPN Epitaxial Silicon Transistor.

Features

1. Collector-Emitter Voltage: VCEO=50V
2. Collector Dissipation: PC(max)=625mW

Pinouts:

c3198-datasheet-pinout

 

Absolute Maximum Ratings (TA=25’C)

1. Collector-Base Voltage : VCBO = 60 V
2. Collector-Emitter Voltage : VCEO = 50 V
3. Emitter-Base Voltage : VEBO = 5 V
4. Collector Current : IC = 150 mA
5. Collector Dissipation : PC = 625 mW
6. Junction Temperature : TJ = 150 ‘C
7. Storage Temperature : TSTG = -55~+150 ‘C

 

C3198 Datasheet PDF


 

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G4BC20F Datasheet PDF – 600V, 9A, IGBT, Transistor

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Part Number: G4BC20F

Function: 600V, 9A, Fast Speed IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Image and Pinouts:

G4BC20F datasheet

 

Description

This is 600V, 9A, Fast IGBT ( insulated-gate bipolar transistor ).

Features

1. Fast : Optimized for medium operating frequencies

2. Generation 4 IGBT design provieds tighter parameter distribution and higher efficiency than Generation 3

3. Industry standard TO-220AB Package.

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRG4BC20FDPBF, IRG4BC20F

 

G4BC20F Datasheet PDF Download


G4BC20F pdf

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