D2539 Datasheet PDF – 600V, 7A, NPN Transistor, 2SD2539

This is one of the transistor types.

Part Number: D2539, 2SD2539

Function: 600V, 7A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Image

D2539 npn transistor

Description

This is 600V, 7A, SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR.

Features

1. High Voltage : VCBO= 1500 V

2. Low Saturation Voltage : VCE (sat)= 5 V (Max.)

3. High Speed : tf= 0.3 µs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.

 

Pinout

D2539 datasheet pinout

 

Maximum Ratings ( Tc = 25 ºC )

1. Collector−Base Voltage : VCBO = 1500 V

2. Collector−Emitter Voltage : VCEO = 600 V

3. Emitter−Base Voltage : VEBO = 5 V

4. Base Current : IB = 3.5 A

5. Collector Power Dissipation : PC = 50 W

 

Equivalent Circuit

D2539 equivalent circuit

Applications:

1. Horizontal Deflection Output For Color TV

D2539 Datasheet


 

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G4BC30KD Datasheet PDF – 600V, 16A, Ultra Fast IGBT – IR

Part Number: G4BC30KD, IRG4BC30KD

Function: 600V, 16A, IGBT

Package: TO-220AB Type

Manufacturer: International Rectifier

Image:

G4BC30KD igbt

Description

This is 600V, 16A, IGBT With Ultrafast Soft Recovery Diode.

Benefits :

1. Latest generation 4 IGBTs offer highest power density motor controls possible

2. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI andswitching losses

3. This part replaces the IRGBC30KD2 and IRGBC30MD2 products

Pinout

G4BC30KD datasheet pinout

 

Features

1. High short circuit rating optimized for motor control, tsc=10µs, @360V VCE(start), TJ= 125°C,VGE= 15V

2. Combines low conduction losses with high switching speed

3. Tighter parameter distribution and higher efficiency than previous generations

4 IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A (Tc = 100°C)

4. Collector dissipation : Pc = 100 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

G4BC30KD Datasheet PDF


 

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