SD14N60 Datasheet PDF – MOSFET, 600V, 14A – Infineon

Part Number: SD14N60

Function: N-Channel MOSFET, 600V, 14A

Package: PG-TO220-3 Type

Maunfacturers : Infineon

Image:
SD14N60
Description

The SD14N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using YR’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.

Pinout

SD14N60 pinout

Features

1. RDS(ON) = 0.65Ω @V GS = 10 V
2. Ultra low gate charge ( typical 42 nC )
3. Low reverse transfer capacitance ( CRSS = typical 25 pF )
4. Fast switching capability
5. Avalanche energy specified
6. Improved dv/dt capability, high ruggedness

SD14N60 Datasheet


SD14N60 pdf

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K07N120 Datasheet PDF – 1200V, 8A, IGBT, Transistor

Part Number: K07N120

Function: 1200V, 8A, Fast IGBT in NPT-technology

Package: TO-247 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

K07N120 datasheet

 

Description

This is 1200V, 8A, IGBT. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode.

Features

1. Lower Eoff compared to previous generation

2. Short circuit withstand time – 10us

3. Designed for :
(1) Motor controls
(2) Inverter
(3) SMPS

4 NPT-Technology offers:
(1) very tight parameter distribution
(2) high ruggedness, temperature stable behaviour
(3) parallel switching capability

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 8 A

4. Power dissipation : Ptot = 125 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: SKW07N120

 

K07N120 Datasheet PDF Download


K07N120 pdf