Transistor

BLF246 Datasheet PDF – 65V, 13A, VHF MOS Transistor

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Part Number: BLF246

Function: VHF power MOS transistor

Package: SOT-121 type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Image :

BLF246 datasheet

 

Description

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information.

 

Pinout: 1. drain  2. source  3. gate  4. source

BLF246 pinout

 

Text :

Features

1. High power gain
2. Low noise figure
3. Easy power control
4. Good thermal stability
5. Withstands full load mismatch.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 65 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 13 A
4. Total Power Dissipation : Ptot = 130 W
5. Junction temperature : Tj = 200 °C
6. Storage temperature: Tstg = -65 to +150 °C

Applications:

1. Large signal amplifier applications in the VHF frequency range. [ … ]

 

BLF246 Datasheet PDF Download


BLF246 pdf

Other data sheets are available within the file: BLF-246

FGH60N60 Datasheet PDF – 600V, 60A, IGBT, Transistor

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: FGH60N60, FGH60N60SF

Function: 600V, 60A, IGBT

Package: TO-247 Type

Manufacturer: Fairchild Semiconductor

See the preview image and the PDF file for more information.

Image

FGH60N60 transistor IGBT

 

 

Description

This is 600V, 60A, Field Stop IGBT.

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

FGH60N60 Pinout

FGH60N60SFD datasheet

Features

1. High Current Capability

2. Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A

3. High Input Impedance

4. Fast Switching

5. RoHS Compliant

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage : Vces = 600 V

2. Gate to Emitter Voltage : VGes = ± 20 V

3. Collector Current: Ic = 120 A

4. Drain power dissipation : PD = 278 W

5. Operating Junction Temperature : Tch = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Induction Heating, UPS, SMPS, PFC

Other data sheets are available within the file: 60N60SF, FGH60N60SF, G60N60, FGH60N60SMD

FGH60N60 Datasheet PDF Download


 

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FGH60N60 pdf

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