K12A50D PDF Datasheet – 500V, 12A, N-Ch, MOSFET, TK12A50D

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K12A50D, TK12A50D

Function: 500V, 12A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K12A50D datasheet pdf

Description

The K12A50D is 500V, 12A, Silicon N-Channel MOSFET. 

 

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 364 mJ
6. Avalanche curren : Iar = 12 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C

K12A50D pinout

K12A50D pinout

Applications

1. Switching Regulator

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2SD1101 Datasheet PDF – 20V, 0.7A, NPN Transistor

Part Number: 2SD1101

Function: Silicon NPN Epitaxial Transistor

Package: MPAK Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:

2SD1101 datasheet

 

 

Application

1. Low frequency amplifier
2. Complementary pair with 2SB831

Absolute Maximum Ratings

1. Collector to base voltage : VCBO = 25 V
2. Collector to emitter voltage : VCEO = 20 V
3. Emitter to base voltage : VEBO = 5 V
4. Collector current : IC = 0.7 A
5. Collector peak current : iC(peak) = 1 A
6. Collector power dissipation : PC = 150 mW

Other data sheets are available within the file: D1101

2SD1101 Datasheet PDF Download


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