This is one of the types of MOSFETs and is a kind of transistor.

Part Number: D452, AOD452

Function: 25V, 55A, N-channel, MOSFET

Package: TO-252 Package

Manufacturer: Alpha and Omega Semiconductor

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Description

This is 25V, 55A, N-Channel Enhancement Mode Field Effect Transistor.

The D452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Features

1. VDS(V) =25V
2. ID= 55 A (VGS= 10V)
3. RDS(ON)< 8.5 mΩ(VGS= 10V)
4. RDS(ON)< 14 mΩ(VGS= 4.5V)
5. 100% UIS tested
6. 100% Rg tested

 

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 55 A

4. Drain power dissipation : PD = 2.5 W

5. Avalanche curren : Iar = 35 A

7. Repetitive avalanche energy : Ear = 61 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: A0D452

D452 Datasheet PDF Download

 

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Part Number: K2983

Function: 30V, 30A, N-Channel, MOS FIELD EFFECT TRANSISTOR

Package: TO-220AB

Manufacturer: NEC => Renesas Technology

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Description

This K2983 is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1. Low on-resistance

(1) RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A)

(2) RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A)

2. Low Ciss   Ciss= 1200 pF TYP.

3. Built-in gate protection diode

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to Source Voltage : VDSS = 30 V

2. Gate to Source Voltage : VGSS = ±20 V

3. Drain Current (DC) : ID(DC) = ±30 A

4. Drain Current (pulse) : ID(pulse) = ±120 A

5. Total Power Dissipation (TA = 25°C) : PT = 1.5 W

 

Applications:

1. SWITCHINGN-CHANNEL POWER MOS FET INDUSTRIAL USE

 

Other data sheets are available within the file: 2SK2983 TO-220AB, 2SK2983-S TO-262, 2SK2983-ZJ TO-263

K2983 Datasheet PDF Download

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