Transistor archives - Page 508 of 2673

Description

This is 410V, N-Channel IGBT.

Features

1. Low collector-emitter saturation voltage : Vcd(sat) < 2.4V
2. High speed hall time : Tf =190nsec(typ.)

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 410 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 40 A

4. Collector dissipation : Pc = 2 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. For plasma display panel drive

2. For high speed switching circuits

Part Number: RJP30H2DPK-M0

RENESAS Package code : PRSS0004ZH-A

Function: 360V, 35A, Silicon N Channel IGBT

Package: TO-3PSG

Images:

RJP30H2DPK-M0 datasheet

Description

This is 360V, 35A, N-channel IGBT.

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES= 1 uA max

Pinout
RJP30H2DPK-M0 pinout igbt
Absolute Maximum Ratings

1. Collector to Emitter voltage : VCES = 360 V

2. Gate to Emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 250 A

5. Collector dissipation : PC = 60 W

6. Junction temperature : Tj = 150 °C

7. Storage temperature: Tstg = –55 to +150 °C

Applications:

1. High speed power switching

Other data sheets are available within the file: RJP30H2DPK, RJP30H2DPK-M0-T2