Transistor

85T03GP Datasheet PDF – BVdss=30V, 75A, N-Ch, MOSFET

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Part Number: 85T03GP, AP85T03GP

Function: 30V, 75A, N-channel MOSFET

Package: TO-263(S), TO-220(P)

Manufacturer: Advanced Power Electronics Corp

Image :
85T03GP datasheet

Description

The 85T03GP is 30V, 75A, N-channel Enhancement mode Power MOSFET.

The TO-263 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GP) is available for low-profile applications.

Features

1. Low Gate Charge

2. Simple Drive Requirement

3. Fast Switching

4. RoHS Compliant

Pinout:

1. Gate  2. Drain  3. Source

85T03GP Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 75 A (Tc = 25°C)

4. Total Power Dissipation: Pd = 107 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

85T03GP Datasheet PDF


85T03GP pdf

Other data sheets are available within the file: 85T03GP, 85TO3GP, AP85T03GH, AP85T03J, AP85TO3GH

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K10A60W Datasheet – 600V, 9.7A, N-Ch, MOSFET, TK10A60W

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Part Number: K10A60W, TK10A60W

Function: 600V, 9.7A, N-Channel MOSFET

Package: TO-220 Type, SC-67 Type

Manufacturer: Toshiba

Image

K10A60W MOSFET Toshiba

Description

This is 600V, 9.7A, Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source on-resistance : RDS (ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS

2. Easy to control Gate switching

3. Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

 

K10A60W Pinout

K10A60W datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Gate-source voltage: VGSS = ±30 V

3. Drain current (Continuous) : ID = 9.7 A

4. Drain current (Pulsed) : IDP = 38.8 A

5. Drain power dissipation (Tc = 25°C): PD = 30 W

6. Single pulse avalanche energy : EAS = 69 mJ

7. Avalanche current : IAR = 4.9 A

8. Drain reverse current (Continuous) : IDR = 9.7 A

9. Drain reverse current (Pulsed) : IDRP = 38.8 A

10. Channel temperature: Tch = 150 °C

11. Storage temperature range : Tstg = -55 to 150 °C

12. Isolation voltage (t = 1.0s) : VISO(RMS) = 2000 V

13. Mounting torque : TOR = 0.6 N・m

Applications:

1. Switching Voltage Regulators

K10A60W Datasheet


 

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