Transistor

QM3002M3 PDF – N-Ch, 30V, 28A, Fast Switching MOSFET

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Part Number: QM3002M3

Function: N-Channel, 30V, 28A, Fast Switching MOSFET

Package: PRPAK 3X3 Pin Type

Manufacturer: UBIQ

Images:

QM3002M3 datasheet pdf

Description

The QM3002M3 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.  The QM3002M3 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

Features

1. Advanced high cell density Trench technology
2. Super Low Gate Charge
3. Excellent CdV/dt effect decline
4. 100% EAS Guaranteed
5. Green Device Available

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 28 A

4. Total Power Dissipation: Pd = 20.8 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA

2. Networking DC-DC Power System

3. Load Switch […]

 

QM3002M3 Datasheet

K3911 Datasheet PDF – N-Ch, 600V, 20A, MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3911, 2SK3911

Function: 600V, 20A, N-Channel MOSFET

Package: TO-3P, SC-65 Type

Manufacturer: Toshiba

Image

k3911-mosfet-toshiba

 

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Small gate charge: Qg = 60 nC (typ.)

2. Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)

3. High forward transfer admittance: |Yfs| = 11 S (typ.)

4. Low leakage current: IDSS = 500 μA (VDS = 600 V)

5. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

k3911-datasheet-pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS=600 V

2. Drain-gate voltage (RGS = 20 kΩ) : VDGR=600 V

3. Gate-source voltage: VGSS=±30 V

4. Drain power dissipation (Tc = 25°C) : PD=150 W

5. Single pulse avalanche energy : EAS=792 mJ

6. Avalanche current : IAR=20 A

7. Repetitive avalanche energy : EAR=15 mJ

Applications:

1. Switching Regulator

K3911 Datasheet


 

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