Transistor archives - Page 520 of 2673

Description

This is -120V, -800mA, Epitaxial Planar PNP Transistor.

Features

1. High Voltage Application

2. Complementary to KTC1027

Pinout

Maximum Ratings ( Ta = 25°C )

1. Collector-Base Voltage: Vcbo = -120V

2. Collector-Emitter Voltage: Vceo = -120V

3. Emitter-Base Voltage: Vebo = -5V

4. Collector Current: Ic = -800mA

5. Emitter Current : Ie = 800mA

6. Collector Power Dissipation : Pc = 1W

Part Number: 2SK3354-Z

Function: SWITCHING N-CHANNEL POWER MOSFET

Package: TO-220MD Type

Image and Pinouts:

2SK3354-Z datasheet

Description

The 2SK3354-Z is N-channel MOS Field Effect Transistor designed for high current switching applications.

1. Super low on-state resistance :
(1) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 42 A)
(2) RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 42 A)

2. Low Ciss: Ciss = 6300 pF TYP.

3. Built-in gate protection diode

Equivalent Circuit :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 83 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: K3354, 2SK3354, 2SK3354-S