MJE13007 Datasheet PDF – 400V, 8A, NPN Transistor

Part Number: MJE13007

Function: 400V, 8A, NPN Transistor

Package: TO-220AB Type

Manufacturer: ON Semiconductor

Image and Pinouts:

MJE13007 datasheet

 

Description

This is NPN 400V, 8A, Bipolar Power Transistor.

The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical.

It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Features

• SOA and Switching Applications Information

• Standard TO−220

• These Devices are Pb−Free and are RoHS Compliant*

• Complementary to the MJE5850 through MJE5852 Series

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 8 A

5. Total Device Dissipation: Pd = 80 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

1. Switching Power Supply

Other data sheets are available within the file: MJE13007G

MJE13007 Datasheet PDF Download

MJE13007 pdf


 

RJH3047 Datasheet PDF – 330V, 50A, IGBT – Renesas

Part Number: RJH3047

Function: IGBT, 330V, 50A

Package:  TO-3P Type

Manufacturer: Renesas ( https://www.renesas.com/ )

Description

INSULATED GATE BIPOLAR TRANSISTOR

Image

RJH3047

Description

This is 330V, 50A, Silicon N Channel IGBT

Basic Information

1. Production Status : EOL
2. PLP : –
3. Number of Channels : Single
4. Configuration [Device] : B-in FRD
5. VCES (V) : 330
6. Ic (Peak) (A) : 200
7. IC (A) @25 °C : 50
8. VCE (sat) (V) : 1.6
9.  tf (µs) typ. : 0.16

RJH3047DPK Datasheet

Applications:

High Speed Power Switching

RJH3047 Datasheet

RJH3047 Datasheet


 

Other data sheets are available within the file: RJH3077DPK, RJH3047DPK

RJH3047 pdf

 

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