Part Number: BUK9506-55B

Function: 5V, 146A, N-channel Trench MOSFET

Package: TO-220AB Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

 

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

1. TrenchMOS technology

2. Q101 compliant

3. 175 °C rated

4. Logic level compatible.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V

2. Gate to source voltage: VGSS = ± 15 V

3. Drain current: ID = 146 A

4. Total Power Dissipation: Pd = 258 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. Automotive systems

2. 12 V and 24 V loads

3. Motors, lamps and solenoids

4. General purpose power switching

 

Other data sheets are available within the file: BUK950655B, BUK9606-55B, BUK9E06-55B

 

BUK9506-55B Datasheet PDF Download

Part Number: CSD19536

Function: 100V, N-Channel NexFET Power MOSFET

Package: TO-220 Plastic Type

Manufacturer: Texas Instruments

Image and Pinouts:

 

Description

The 100 V, 2.3 mΩ, TO-220 NexFET power MOSFET is designed to minimize losses in power
conversion applications.

 

Features

1. Ultra-Low Qg and Q gd

2. Low Thermal Resistance

3. Avalanche Rated
(1) Pb-Free Terminal Plating
(2) RoHS Compliant

4. Halogen Free

5. TO-220 Plastic Package

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 150 A

4. Power Dissipation: Pd = 375 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. Secondary Side Synchronous Rectifier

2. Motor Control

Other data sheets are available within the file: CSD19536KCS

 

CSD19536 Datasheet PDF Download