Transistor

6R190C6 Datasheet PDF – 600V, 20.2A, Power MOSFET

Posted on by pinout

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 6R190C6, IPP60R190C6

Function: 600V, 20.2A, CoolMOS C6 Power Transistor

Package: PG-TO247, PG-TO263, PG-TO262, PG-TO220, PG-TO220 FullPAK Type

Manufacturer: Infineon Technologies

Image

6R190C6 image

Description

This is 600V, Metal Oxide Semiconductor Field Effect Transistor.

CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Pinout

6R190C6 datasheet pinout

Features

1. Extremely low losses due to very low FOM R dson*Qg and Eoss

2. Very high commutation ruggedness

3. Easy to use/drive

4. JEDEC qualified, Pb-free plating, Halogen free

 

6R190C6 Datasheet PDF Download


 

FGP20N6S2 Datasheet PDF – 600V, N-Ch, IGBT, TO-220

Posted on by pinout

Part Number: FGP20N6S2

Function: 600V, SMPS II Series N-Channel, IGBT

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FGP20N6S2 datasheet

 

Description

The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.

Features

• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon

SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

Other data sheets are available within the file:

20N6S2, FGB20N6S2, FGB20N6S2D, FGB20N6S2DT, FGH20N6S2

 

FGP20N6S2 Datasheet PDF Download


FGP20N6S2 pdf