Transistor

IRF520N Datasheet PDF – 100V, 9.7A, MOSFET, Transistor

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This is a power MOSFET used in electronic circuits for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 100V and a current rating of 9.7A. The IRF520N has a low on-resistance of 0.20 Ohm, which allows it to handle high power and reduce powe

Function: HEXFET Power MOSFET ( VDSS = 100V, ID = 9.7A )

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image and Pinouts:

IRF520N datasheet

 

Description

This is HEXFET Power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. Fully Avalanche Rated

6. Lead-Free

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9.7 A

4. Drain Power Dissipation: Pd = 48 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Other data sheets are available within the file:

IRF520, IRF520NPBF

 

IRF520N Datasheet PDF Download


IRF520N pdf

FGP20N6S2 Datasheet PDF – 600V, N-Ch, IGBT, TO-220

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Part Number: FGP20N6S2

Function: 600V, SMPS II Series N-Channel, IGBT

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FGP20N6S2 datasheet

 

Description

The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.

Features

• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon

SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

Other data sheets are available within the file:

20N6S2, FGB20N6S2, FGB20N6S2D, FGB20N6S2DT, FGH20N6S2

 

FGP20N6S2 Datasheet PDF Download


FGP20N6S2 pdf